STPSC806 datasheet(1/7 Pages) STMICROELECTRONICS

номер детали	STPSC806

подробное описание детали	600 V power Schottky silicon carbide diode

PDF	7 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

Logo

1 / 7 page

September 2009

Doc ID 16286 Rev 1

1/7

7

STPSC806

600 V power Schottky silicon carbide diode

Features

■ No or negligible reverse recovery

■ Switching behavior independent of

temperature

■ Particularly suitable in PFC boost diode

function

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide bandgap material

allows the design of a Schottky diode structure

with a 600 V rating. Due to the Schottky

construction no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

ST SiC diodes will boost the performance of PFC

operations in hard switching conditions.

Table 1.

Device summary

IF(AV)

8 A

VRRM

600 V

Tj (max)

175 °C

QC (typ)

10 nC

K

A

TO-220AC

STPSC806D

www.st.com

Аналогичный номер детали - STPSC806

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STPSC8065	503Kb / 9P	650 V power Schottky silicon carbide diode July 2017 Rev 2
	STPSC8065-Y	506Kb / 9P	Automotive 650 V power Schottky silicon carbide diode July 2017 Rev 2
	STPSC8065DY	506Kb / 9P	Automotive 650 V power Schottky silicon carbide diode July 2017 Rev 2
	STPSC806D	96Kb / 7P	600 V power Schottky silicon carbide diode 05-May-2008

More results

Аналогичное описание - STPSC806

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STPSC806D	96Kb / 7P	600 V power Schottky silicon carbide diode 05-May-2008
	STPSC1006D	96Kb / 7P	600 V power Schottky silicon carbide diode 05-May-2008
	STPSC406	108Kb / 8P	600 V power Schottky silicon carbide diode 24-Sep-2009
	STPSC606	106Kb / 8P	600 V power Schottky silicon carbide diode 24-Sep-2009
	STPSC1206D	89Kb / 7P	600 V power Schottky silicon carbide diode 28-Sep-2009
	STPSC20H065CW	111Kb / 8P	650 V power Schottky silicon carbide diode 10-Oct-2012
	STPSC2006CW	80Kb / 7P	600 V power Schottky silicon carbide diode 01-Mar-2011
	STPSC8H065D	228Kb / 14P	650 V power Schottky silicon carbide diode 07-Jan-2014
	STPSC1206	89Kb / 7P	600 V power Schottky silicon carbide diode September 2009 Rev 1
WOLFSPEED, INC.	CSD01060A	1Mb / 9P	600 V, 1 A Silicon Carbide Schottky Diode Rev. 18, March 2023

More results

STPSC806 датащи(PDF) 1 Page - STMicroelectronics

STPSC806 датащи(HTML) 1 Page - STMicroelectronics

Аналогичный номер детали - STPSC806

Аналогичное описание - STPSC806

Html Pages

1 2 3 4 5 6 7

датащи скачать

ссылки URL