STPSC406D datasheet(3/8 Pages) STMICROELECTRONICS

номер детали	STPSC406D

подробное описание детали	600 V power Schottky silicon carbide diode

PDF	8 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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STPSC406

Characteristics

Doc ID 16283 Rev 1

3/8

Figure 1.

Forward voltage drop versus

forward current (typical values)

Figure 2.

Reverse leakage current versus

reverse voltage applied

(maximum values)

FM(A)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

j=150 °C

j=175 °C

j=25 °C

VFM(V)

R(µA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

100

150

200

250

300

350

400

450

500

550

600

j=25 °C

j=150 °C

j=175 °C

VR(V)

Figure 3.

Peak forward current versus case

temperature (TO-220AC)

Figure 4.

Peak forward current versus case

temperature (DPAK)

M(A)

100

125

150

175

δ=tp/T

δ=0.1

δ=0.3

δ=0.5

d=1

δ=1

d=0.7

δ=0.7

TC(°C)

M(A)

100

125

150

175

δ=tp/T

δ=0.1

δ=0.3

δ=0.5

d=1

δ=1

d=0.7

δ=0.7

TC(°C)

Figure 5.

Junction capacitance versus

reverse voltage applied

(typical values)

Figure 6.

Relative variation of thermal

impedance junction to case

versus pulse duration (TO-220AC)

C(pF)

100

125

150

100

1000

F=1 MHz

OSC=30 mVRMS

j=25 °C

VR(V)

th(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

tp(s)

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