ACST4_09 datasheet(4/13 Pages) STMICROELECTRONICS

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Characteristics

ASCT4

4/13

Doc ID 8766 Rev 5

Figure 4.

On-state rms current versus

ambient temperature (free air

convection, full cycle)

Figure 5.

Relative variation of thermal

impedance versus pulse duration

Figure 6.

Relative variation of gate trigger

current (IGT) and voltage (VGT)

versus junction temperature

Figure 7.

Relative variation of holding

current (IH) and latching current (IL)

versus junction temperature

Figure 8.

Surge peak on-state current

versus number of cycles

Figure 9.

Non repetitive surge peak on-state

current and corresponding value of

I2t versus sinusoidal pulse width

IT(RMS)(A)

0.0

0.5

1.0

1.5

2.0

100

125

α=180°

TO-220FPAB

DPAK with copper

surface = 0.5 cm2

Ta(°C)

K = [Zth / Rth]

1.0E-02

1.0E-01

1.0E+00

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

1.0E+03

th(j-a)

th(j-c)

TO-220FPAB

DPAK

Tp(s)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-50

-25

100

125

IGT Q3

IGT Q1-Q2

Q1-Q2-Q3

IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C]

(typical values)

Tj(°C)

0.0

0.5

1.0

1.5

2.0

2.5

-50

-25

100

125

IH,IL[Tj] / IH,IL[Tj = 25 °C]

Tj(°C)

(typical values)

ITSM(A)

100

1000

Non repetitive

j initial=25 °C

One cycle

t=20ms

Repetitive

C=102°C

Number of cycles

100

1000

0.01

0.10

1.00

10.00

t (ms)

ITSM(A), I²t (A²s)

dl /dt limitation: 100 A / µs

Tj initial = 25 °C

ITSM

I²t

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