2001 May 31

2

NXP Semiconductors

Product data sheet

PNP Darlington transistors

BSP60; BSP61; BSP62

FEATURES

• High current (max. 0.5 A)

• Low voltage (max. 80 V)

• Integrated diode and resistor.

APPLICATIONS

• Industrial switching applications such as:

– Print hammer

– Solenoid

– Relay and lamp drivers.

DESCRIPTION

PNP Darlington transistor in a SOT223 plastic package.

NPN complements: BSP50, BSP51 and BSP52.

PINNING

PIN

DESCRIPTION

1

base

2, 4

collector

3

emitter

Fig.1 Simplified outline (SOT223) and symbol.

4

12

3

MAM266

Top view

1

2, 4

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated

Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BSP60

−

−60

V

BSP61

−

−80

V

BSP62

−

−90

V

collector-emitter voltage

BSP60

−

−45

V

BSP61

−

−60

V

BSP62

−

−80

V

emitter-base voltage

open collector

−

−5

V

collector current (DC)

−

−1

A

peak collector current

−

−2

A

base current (DC)

−

−100

mA

total power dissipation

−

1.25

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C