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BAW101S датащи(PDF) 4 Page - NXP Semiconductors

номер детали BAW101S
подробное описание детали  High voltage double diode
PDF  9 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

BAW101S датащи(HTML) 4 Page - NXP Semiconductors

  BAW101S Datasheet HTML 1Page - NXP Semiconductors BAW101S Datasheet HTML 2Page - NXP Semiconductors BAW101S Datasheet HTML 3Page - NXP Semiconductors BAW101S Datasheet HTML 4Page - NXP Semiconductors BAW101S Datasheet HTML 5Page - NXP Semiconductors BAW101S Datasheet HTML 6Page - NXP Semiconductors BAW101S Datasheet HTML 7Page - NXP Semiconductors BAW101S Datasheet HTML 8Page - NXP Semiconductors BAW101S Datasheet HTML 9Page - NXP Semiconductors  
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2003 May 13
4
NXP Semiconductors
Product data sheet
High voltage double diode
BAW101S
THERMAL CHARACTERISTICS
Notes
1.
One or more diodes loaded.
2.
Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
note 1
255
K/W
Rth j-a
thermal resistance from junction to ambient
note 2
357
K/W
GRAPHICAL DATA
handbook, halfpage
0
(1)
(2)
50
100
Tamb (°C)
IF
(mA)
200
300
0
100
200
150
MLE057
Device mounted on an FR4 printed-circuit board.
Cathode-lead mounting pad = 1 cm2.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
(1) Single diode loaded.
(2) Double diode loaded.
handbook, halfpage
02
600
IF
(mA)
0
200
400
MBG384
1
VF (V)
(1)
(3)
(2)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.3
Forward current as a function of forward
voltage.



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