1996 Sep 17

2

NXP Semiconductors

Product data sheet

High-speed diode

BAW62

FEATURES

• Hermetically sealed leaded glass

SOD27 (DO-35) package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 75 V

• Repetitive peak forward current:

max. 450 mA.

APPLICATIONS

• High-speed switching

• Fast logic applications.

DESCRIPTION

The BAW62 is a high-speed switching diode fabricated in planar technology,

and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)

package.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

The diode is type branded.

handbook, halfpage

MAM246

k

a

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1.

Device mounted on an FR4 printed circuit-board; lead length 10 mm.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

repetitive peak reverse voltage

−

75

V

continuous reverse voltage

−

75

V

continuous forward current

see Fig.2; note 1

−

250

mA

repetitive peak forward current

−

450

mA

non-repetitive peak forward current

surge; see Fig.4

t = 1

μs

−

4

A

t = 1 ms

−

1

A

t = 1 s

−

0.5

A

total power dissipation

−

350

mW

storage temperature

−65

+200

°C

junction temperature

−

200

°C