2001 Feb 27

3

NXP Semiconductors

Product data sheet

Schottky barrier (double) diodes

BAT854W series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

ELECTRICAL CHARACTERISTICS

Note

1.

THERMAL CHARACTERISTICS

Note

1.

Refer to SOT323 standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

continuous reverse voltage

−

40

V

continuous forward current

−

200

mA

repetitive peak forward current

−

300

mA

non-repetitive peak forward current

t = 8.3 ms half sinewave;

JEDEC method

−

1

A

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Per diode

continuous forward voltage

see Fig.6

200

−

mV

260

−

mV

340

−

mV

−

420

mV

−

550

mV

continuous reverse current

−

0.5

μA

diode capacitance

−

20

pF

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient note 1

625

K/W