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ZDM4206N датащи(PDF) 3 Page - Zetex Semiconductors

номер детали ZDM4206N
подробное описание детали  DUAL N-CHANNEL ENHANCEMENT MODE AVALANCHE RATED MOSFET
PDF  3 Pages
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производитель  ZETEX [Zetex Semiconductors]
домашняя страница  http://www.diodes.com/
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ZDM4206N датащи(HTML) 3 Page - Zetex Semiconductors

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TYPICAL CHARACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
24
6
8
10
010
20
30
40
50
Saturation Characteristics
VDS - Drain Source Voltage (Volts)
0
4
2
6
10
8
10V
8V
9V
7V
5V
4V
6V
4.5V
3.5V
VGS=
20V
12V
14V
16V
5V
4V
10V
8V
6V
9V
7V
4.5V
3.5V
VGS=
20V
12V
14V
16V
0
4
2
6
10
8
Output Characteristics
VDS - Drain Source Voltage (Volts)
24
6
8
10
010
20
30
40
50
Saturation Characteristics
VDS - Drain Source Voltage (Volts)
0
4
2
6
10
8
10V
8V
9V
7V
5V
4V
6V
4.5V
3.5V
VGS=
20V
12V
14V
16V
5V
4V
10V
8V
6V
9V
7V
4.5V
3.5V
VGS=
20V
12V
14V
16V
0
4
2
6
10
8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX.
UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS
60
V
ID=1mA, VGS=0V
Gate-Source Threshold Voltage
VGS(th)
1.3
3
V
ID=1mA, VDS= VGS
Gate-Body Leakage
IGSS
100
nA
VGS=± 20V, VDS=0V
Zero Gate Voltage Drain Current
IDSS
10
100
µA
µA
VDS=60V, VGS=0
VDS=48V, VGS=0V, T=125°C(2)
On-State Drain Current(1)
ID(on)
3A
VDS=25V, VGS=10V
Static Drain-Source On-State
Resistance (1)
RDS(on)
1
1.5
Ω
Ω
VGS=10V,ID=1.5A
VGS=5V,ID=0.5A
Forward Transconductance(1)(2)
gfs
300
mS
VDS=25V,ID=1.5A
Input Capacitance (2)
Ciss
100
pF
Common Source Output
Capacitance (2)
Coss
60
pF
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance (2) Crss
20
pF
Turn-On Delay Time (2)(3)
td(on)
8ns
VDD≈25V, ID=1.5A,VGEN=10V
Rise Time (2)(3)
tr
12
ns
Turn-Off Delay Time (2)(3)
td(off)
12
ns
Fall Time (2)(3)
tf
15
ns
(1) Measured under pulsed conditions. Width=300
µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50
Ω source impedance and <5ns rise time on a pulse
generator
ZDM4206N
3 - 318
Transfer Characteristics
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
0
2
4
6810
6
4
0
2
VDS=10V
0
10
6
2
4
8
02
4
6
8
10
ID=
3A
1.5A
0.5A
On-resistance v drain current
ID-Drain Current (Amps)
0.1
1.0
10
4.5V
6V
VGS=3.5V
8V 10V
0.1
1.0
Normalised RDS(on) and VGS(th) v Temperature
Tj-Junction Temperature (°C)
-50 -25
0
25 50 75 100
150
125
175 200
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-
So
urc
e R
es
ista
nc
e R
DS(
on
)
Gate Threshold Voltage VGS(TH
)
ID=1.5A
VGS=10V
ID=1mA
VGS=VDS
2.6
225
20V
14V
Transfer Characteristics
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
0
2
4
6810
6
4
0
2
VDS=10V
0
10
6
2
4
8
02
4
6
8
10
ID=
3A
1.5A
0.5A
On-resistance v drain current
ID-Drain Current (Amps)
0.1
1.0
10
4.5V
6V
VGS=3.5V
8V 10V
0.1
10
Normalised RDS(on) and VGS(th) v Temperature
Tj-Junction Temperature (°C)
-50 -25
0
25 50 75 100
150
125
175 200 225
20V
14V
Transconductance v drain current
ID- Drain Current (Amps)
Transconductance v gate-source voltage
VGS-Gate Source Voltage (Volts)
0
1
234
5
6
7
8
9
10
VDS=10V
0
300
200
100
400
800
700
600
500
900
1000
0
1
234
5
6
7
8
9
10
VDS=10V
0
300
200
100
400
800
700
600
500
900
1000
TYPICAL CHARACTERISTICS
ZDM4206N
3 - 319



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