74HC2G86 datasheet(6/14 Pages) NXP

6 / 14 page

74HC_HCT2G86_3

Product data sheet

Rev. 03 — 7 May 2009

6 of 14

NXP Semiconductors

74HC2G86; 74HCT2G86

Dual 2-input exclusive-OR gate

11. Dynamic characteristics

[1]

tpd is the same as tPLH and tPHL.

[2]

tt is the same as tTLH and tTHL.

[3]

CPD is used to determine the dynamic power dissipation (PD in µW).

PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

Σ(C

L × VCC

× f

o) = sum of the outputs.

Table 8.

Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7.

Symbol Parameter

Conditions

°C

−40 °C to +85 °C −40 °C to +125 °C Unit

Min

Typ

Max

Min

Max

Min

Max

74HC2G86

tpd

propagation

delay

nA, nB to nY; see Figure 6

[1]

VCC = 2.0 V

120

150

180

VCC = 4.5 V

VCC = 6.0 V

9.0

transition

time

nY; see Figure 6

[2]

VCC = 2.0 V

110

VCC = 4.5 V

VCC = 6.0 V

CPD

power

dissipation

capacitance

per buffer;

CL = 50 pF; fi = 1 MHz;

VI = GND to VCC

[3]

-10-

74HCT2G86

tpd

propagation

delay

nA, nB to nY; see Figure 6

[1]

VCC = 4.5 V

transition

time

nY; see Figure 6

[2]

VCC = 4.5 V

CPD

power

dissipation

capacitance

per buffer;

CL = 50 pF; fi = 1 MHz;

VI = GND to VCC

[3]

-9-

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