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FMMT618 датащи(PDF) 2 Page - Zetex Semiconductors

номер детали FMMT618
подробное описание детали  NPN SILICON POWER (SWITCHING) TRANSISTORS
PDF  4 Pages
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производитель  ZETEX [Zetex Semiconductors]
домашняя страница  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

FMMT618 датащи(HTML) 2 Page - Zetex Semiconductors

  FMMT618 Datasheet HTML 1Page - Zetex Semiconductors FMMT618 Datasheet HTML 2Page - Zetex Semiconductors FMMT618 Datasheet HTML 3Page - Zetex Semiconductors FMMT618 Datasheet HTML 4Page - Zetex Semiconductors  
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current
I+/I*=40
Collector Current
10A
Collector Current
Collector Current
0.0
I+/I*=40
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V+-=2V
0
450
225
V+-=2V
0.2
0.0
1.0
0.8
0.6
0.4
10
1.0
0.1
0.01
SINGLE PULSE TEST Tamb= 25 deg C
VCE (VOLTS)
TYPICAL CHARACTERISTICS
0.2
0.4
0.6
-55°C
100°C
25°C
25°C
100°C
-55°C
25°C
100°C
-55°C
25°C
100°C
-55°C
D.C.
1s
100ms
10ms
1ms
100µs
0.1
10A
1mA
10A
1mA
10A
1mA
10A
1mA
Safe Operating Area
1
100m
10m
1m
1m
10m
100m
1
10
IC - Collector Current (A)
VCE(sat) v IC
I+/I*=10
I+/I*=50
I+/I*=100
+25°C
VCE(SAT) vs IC
VBE(SAT) vs IC
HFE vs IC
VBE(ON) vs IC
10mA
100mA
1A
10mA
100mA
1A
10mA
100mA
1A
10mA
100mA
1A
110
100
FMMT619
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
FMMT624
FMMT625
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
125
250
150
300
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
125
160
150
175
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
58.3
58.3
V
IE=100µA
Collector Cut-Off
Current
ICBO
100
100
nA
nA
VCB=100V
VCB=130V
Emitter Cut-Off
Current
IEBO
100
100
nA
VEB=4V
Collector Emitter
Cut-Off Current
ICES
100
100
nA
nA
VCES=100V
VCES=130V
Collector-Emitter
Saturation Voltage
VCE(SAT)
26
70
160
165
50
150
220
250
26
110
180
50
200
300
mV
mV
mV
mV
mV
IC=0.1A, IB=10mA*
IC=0.1A, IB=1mA*
IC=0.5A, IB=50mA*
IC=0.5A, IB=10mA*
IC=1A, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(SAT)
0.85
1.0
0.85
1.0
V
IC=1A, IB=50mA*
Base-Emitter
Turn-On Voltage
VBE(ON)
0.7
1.0
0.74
1.0
V
IC=1A, VCE=10V*
Static Forward
Current Transfer
Ratio
hFE
200
300
100
400
450
140
18
200
300
30
400
450
45
15
IC=10mA, VCE=10V*
IC=0.2A, VCE=10V*
IC=1A, VCE=10V*
IC=3A, VCE=10V*
Transition
Frequency
fT
100
155
100
135
MHz
IC=50mA, VCE=10V
f=100MHz
Output Capacitance COBO
7
15
6
10
pF
VCB=10V, f=1MHz
Turn-On Time
t(ON)
60
160
ns
VCC=50V, IC=0.5A
IB1=-IB2=50mA
Turn-Off Time
t(OFF)
1300
1500
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT624
FMMT625
3 - 154
3 - 155



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