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FMMT458 датащи(PDF) 2 Page - Zetex Semiconductors

номер детали FMMT458
подробное описание детали  NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR
PDF  2 Pages
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производитель  ZETEX [Zetex Semiconductors]
домашняя страница  http://www.diodes.com/
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FMMT458 датащи(HTML) 2 Page - Zetex Semiconductors

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SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – OCTOBER 1995
FEATURES
* 400 Volt VCEO
COMPLEMENTARY TYPE –
FMMT558
PARTMARKING DETAIL –
458
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
400
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
5V
Continuous Collector Current
IC
225
mA
Peak Pulse Current
ICM
1A
Base Current
IB
200
mA
Power Dissipation at Tamb=25°C
Ptot
500
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
400
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO(sus)
400
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5V
IE=100µA
Collector Cut-Off Current
ICBO
100
nA
VCB=320V
Collector Cut-Off Current
ICES
100
nA
VCE=320V
Emitter Cut-Off Current
IEBO
100
nA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.2
0.5
V
V
IC=20mA, IB=2mA*
IC=50mA, IB=6mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=50mA, IB=5mA*
Base-Emitter
Turn On Voltage
VBE(on)
0.9
V
IC=50mA, VCE=10V*
Static Forward
Current Transfer Ratio
hFE
100
100
15
300
IC=1mA, VCE=10V
IC=50mA, VCE=10V*
IC=100mA, VCE=10V*
Transition Frequency
fT
50
MHz
IC=10mA, VCE=20V
f=20MHz
Collector-Base
Breakdown Voltage
Cobo
5pF
VCB=20V, f=1MHz
Switching times
ton
toff
135 Typical
2260 Typical
ns
ns
IC=50mA, VCC=100V
IB1=5mA, IB2=-10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FMMT458
C
B
E
SOT23
3 - 113
3 - 112
FMMT458
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I+ -
Collector Current (Amps)
Tamb=25°C
VCE(sat) v IC
I+ -
Collector Current (Amps)
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
I+ -
Collector Current (Amps)
I+ -
Collector Current (Amps)
hFE v IC
VBE(sat) v IC
I+ -
Collector Current (Amps)
VBE(on) v IC
IC/IB=50
IC/IB=10
VCE=10V
VCE=10V
300
200
100
V+- -
Collector Voltage (Volts)
Safe Operating Area
100
110
0.001
0.01
0.1
1.0
Single Pulse Test at Tamb=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
0.001
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55°C
+25°C
+100°C
+175°C
IC/IB=10
0.001
0.001
IC/IB=20
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55°C
+25°C
+100°C
+175°C
IC/IB=10
0.001
1000



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