2N7002KA_3

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 03 — 25 February 2008

7 of 11

NXP Semiconductors

2N7002KA

N-channel TrenchMOS FET

Fig 9.

Gate-source threshold voltage as a function of

junction temperature

Fig 10. Sub-threshold drain current as a function of

gate-source voltage

Fig 11. Source current as a function of source-drain

voltage; typical values

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

003aab101

0

1

2

3

-60

0

60

120

180

(V)

min

typ

max

003aab100

10

-6

10

-5

10

-4

10

-3

0123

(A)

min

typ

max

003aab356

0

0.2

0.4

0.6

0.8

1

0.2

0.4

0.6

0.8

1

(A)

150

°C

003aac035

10

1

10

C

(pF)

1