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BCW68F датащи(PDF) 2 Page - Zetex Semiconductors

номер детали BCW68F
подробное описание детали  PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
PDF  2 Pages
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производитель  ZETEX [Zetex Semiconductors]
домашняя страница  http://www.diodes.com/
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BCW68F датащи(HTML) 2 Page - Zetex Semiconductors

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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CEO -45
V
ICEO=-10mA
V(BR)CES -60
IC=-10
µA
Emitter-Base Breakdown Voltage
V(BR)EBO -5
V
IEBO =-10µA
Collector-Emitter
Cut-off Current
ICES
-20
-10
nA
µA
VCES =-45V
VCES =-45V, Tamb=150°C
Emitter-Base Cut-Off Current
IEBO
-20
nA
VEBO =-4V
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.7
-0.3
V
V
IC=-100mA, IB = -10mA
IC= -500mA, IB =-50mA*
Base-Emitter Saturation Voltage
VBE(sat)
-2
V
IC=-500mA,IB=-50mA*
Static
Forward
Current
Transfer
BCW68F
hFE
100
35
170
250
IC=-100mA, VCE =-1V*
IC=-500mA, VCE =-2V*
BCW68G
hFE
160
60
250
400
IC=-100mA, VCE =-1V*
IC=-500mA, VCE =-2V*
BCW68H
hFE
250
100
350
630
IC=-100mA, VCE =-1V*
IC=-500mA, VCE =-2V*
Transition Frequency
fT
100
MHz
IC =-20mA, VCE =-10V
f = 100MHz
Output Capacitance
Cobo
12
18
pF
VCB =-10V, f =1MHz
Input Capacitance
Cibo
80
pF
VEB =-0.5V, f =1MHz
Noise Figure
N
2
10
dB
IC= -0.2mA, VCE =- 5V
RG =1KΩ, f=1KH
∆f=200Hz
Switching times:
Turn-On Time
Turn-Off Time
ton
toff
100
400
ns
ns
IC=-150mA
IB1=- IB2 =-15mA
RL=150Ω
Spice parameter data is available upon request for this device
*Measured under pulsed conditions.
BCW68
TBA



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