SSM9928EO datasheet(1/6 Pages) SSC

номер детали	SSM9928EO

подробное описание детали	DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

PDF	6 Pages

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производитель	SSC [Silicon Standard Corp.]

домашняя страница	http://www.siliconstandard.com

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SSM9928(G)EO

Rev.2.01 12/06/2004

DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Low on-resistance

BV DSS

20V

Capable of 2.5V gate drive

RDS(ON)

23m

Ω

Ideal for DC/DC battery applications

ID

5A

Description

Absolute Maximum Ratings

Symbol

Units

VDS

V

VGS

V

ID @ TA=25°C

ID @ TA=70°C

IDM

A

PD @ TA=25°C

W/°C

TSTG

TJ

Symbol

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

3

Max.

125

°C/W

Thermal Data

Parameter

Storage Temperature Range

Total Power Dissipation

1

W

-55 to 150

°C

Operating Junction Temperature Range

-55 to 150

°C

Linear Derating Factor

0.008

Drain Current

3, V

GS @ 4.5V

3.5

A

Pulsed Drain Current

1

25

Gate-Source Voltage

±12

Drain Current

3, V

GS @ 4.5V

5

A

Parameter

Rating

Drain-Source Voltage

20

S1

G1

D1

S2

G2

D2

Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

D2

S2

G2

D1

S1

G1

TSSOP-8

This device is available with Pb-free lead finish (second-level interconnect) as SSM9928GEO.

Аналогичный номер детали - SSM9928EO

производитель	номер детали	датащи	подробное описание детали
Silicon Standard Corp.	SSM9928O	266Kb / 6P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Аналогичный номер детали - SSM9928EO

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