SSM6679M datasheet(2/4 Pages) SSC

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SSM6679M

Rev.2.02 4/06/2004

Electrical Characteristics @ Tj=25

oC (unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-30

∆BV

DSS/

∆Tj

Breakdown Voltage Temperature Coefficient

Reference to 25°C, ID=-1mA

-0.03

V/°C

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V, ID=-14A

Ω

VGS=-4.5V, ID=-11A

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1

-3

gfs

Forward Transconductance

VDS=-10V, ID=-14A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=-30V, VGS=0V

-1

Drain-Source Leakage Current (Tj=70

oC)

VDS=-24V, VGS=0V

-25

IGSS

Gate-Source Leakage

VGS=-

Total Gate Charge

ID=-14A

Qgs

Gate-Source Charge

VDS=-24V

Qgd

Gate-Drain ("Miller") Charge

VGS=-4.5V

td(on)

Turn-on Delay Time

VDS=-15V

Rise Time

ID=-1A

td(off)

Turn-off Delay Time

RG=3.3Ω ,VGS=-10V

Fall Time

RD=15Ω

-43

Ciss

Input Capacitance

VGS=0V

2860

4580

Coss

Output Capacitance

VDS=-25V

950

Crss

Reverse Transfer Capacitance

f=1.0MHz

640

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VSD

Forward On Voltage

IS=-2A, VGS=0V

-1.2

Reverse Recovery Time

IS=-14A, VGS=0V,

Qrr

Reverse Recovery Charge

dI/dt=100A/µs

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on 1 in

2 copper pad of FR4 board ; 125 °C/W when mounted on Min. copper pad.

± 25V

±100

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