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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SSM4800M датащи(PDF) 2 Page - Silicon Standard Corp. |
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SSM4800M датащи(HTML) 2 Page - Silicon Standard Corp. |
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2 / 6 page  www.SiliconStandard.com 2 of 6 SSM4800M Electrical Characteristics @ T j=25 oC (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 25 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.037 -V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=9A - - 18 mΩ VGS=4.5V, ID=7A - - 33 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=15V, ID=10A - 20 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=25V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=55 oC) VDS=20V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=- - nA Qg Total Gate Charge 2 ID=9A - 10.9 - nC Qgs Gate-Source Charge VDS=15V - 1.9 - nC Qgd Gate-Drain ("Miller") Charge VGS=5V - 7.4 - nC td(on) Turn-on Delay Time 2 VDS=15V - 7 - ns tr Rise Time ID=1A - 10.5 - ns td(off) Turn-off Delay Time RG=6.2Ω,VGS=10V - 20 - ns tf Fall Time RD=15Ω - 17.5 - ns Ciss Input Capacitance VGS=0V - 390 - pF Coss Output Capacitance VDS=25V - 245 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 100 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 2.3 A ISM Pulsed Source Current ( Body Diode ) 1 -- 40 A VSD Forward On Voltage 2 Tj=25℃, IS=2.3A, VGS=0V - - 1.3 V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. ± 20V ±100 Rev.2.01 6/26/2003 |
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