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SSM4575M датащи(PDF) 2 Page - Silicon Standard Corp.

номер детали SSM4575M
подробное описание детали  COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
PDF  7 Pages
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производитель  SSC [Silicon Standard Corp.]
домашняя страница  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM4575M датащи(HTML) 2 Page - Silicon Standard Corp.

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SSM4575M
Rev.1.01 7/05/2004
N-channel Electrical Characteristics @ T j=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
60
-
-
V
∆BV
DSS/∆ Tj
Breakdown Voltage Temperature Coefficient
Reference to 25°C,ID=1mA
-
0.04
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=5A
-
-
36
m
Ω
VGS=4.5V, ID=3A
-
-
42
m
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
8
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=60V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=48V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
Qg
Total Gate Charge
2
ID=5A
-
18
29
nC
Qgs
Gate-Source Charge
VDS=48V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
10
-
nC
td(on)
Turn-on Delay Time
2
VDS=30V
-
10
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω ,VGS=10V
-
32
-
ns
tf
Fall Time
RD=30Ω
-10
-
ns
Ciss
Input Capacitance
VGS=0V
-
1670
2670
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
117
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=1.7A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
2
IS=5A, VGS=0V
-
34
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
48
-
nC



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