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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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XM28C040 датащи(PDF) 1 Page - Xicor Inc. |
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XM28C040 датащи(HTML) 1 Page - Xicor Inc. |
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1 / 17 page  XM28C040 1 5 Volt, Byte Alterable E2PROM © Xicor, Inc. 1991-1997 Patents Pending Characteristics subject to change without notice 3873-1.7 6/13/97 T1/C0/D0 SH TYPICAL FEATURES • High Density 4 Megabit (512K x 8) Module • Access Time of 200ns at –55 °C to +125°C • Base Memory Component: Xicor X28C010 • Pinout Conforms to JEDEC Standard for 4 Megabit E2PROM • Fast Write Cycle Times —256 Byte Page Write • Early End of Write Detection — DATA Polling —Toggle Bit Polling • Software Data Protection • Three Temperature Ranges —Commercial: 0 °C to +75°C —Industrial: –40 ° to +85°C —Military: –55 ° to +125°C • High Rel Modules all Components are MIL-STD-883 Compliant • Endurance: 100,000 Cycles DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010's mounted on a co-fired multilayered ceramic substrate. Individual components are 100% tested prior to assembly in module form and then 100% tested after assembly. The XM28C040 is configured 512K x 8 bit. The module supports a 256-byte page write operation. This com- bined with DATA Polling or Toggle Bit Polling, effectively provides a 39 µs/byte write cycle, enabling the entire array to be rewritten in 10 seconds. The XM28C040 provides the same high endurance and data retention as the X28C010. 4 Megabit Module XM28C040 512K x 8 Bit 3873 FHD F01 WE OE CE A18 A17 I/O0–I/O7 A0–A16 X28C010 A0–A16 I/O0–I/O7 CE WE OE OE X28C010 A0–A16 I/O0–I/O7 CE WE X28C010 A0–A16 I/O0–I/O7 CE WE OE X28C010 A0–A16 I/O0–I/O7 CE WE OE FUNCTIONAL DIAGRAM PIN CONFIGURATION 3873 FHD F02 A18 A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC WE A17 A14 A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/04 I/O3 XM28C040 |
Аналогичный номер детали - XM28C040 |
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Аналогичное описание - XM28C040 |
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