SSM4532M datasheet(3/11 Pages) SSC

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SSM4532M

P-channel Electrical Characteristics @ Tj=25

oC (unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

-30

∆BV

DSS/

∆Tj

Breakdown Voltage Temperature Coefficient

Reference to 25°C, ID=-1mA

-0.028

V/°C

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V, ID=-4A

Ω

VGS=-4.5V, ID=-3A

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1

-3

gfs

Forward Transconductance

VDS=-10V, ID=-4A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=-30V, VGS=0V

-1

Drain-Source Leakage Current (Tj=55

oC)

VDS=-24V, VGS=0V

-25

IGSS

Gate-Source Leakage

VGS=-

Total Gate Charge

ID=-4A

18.3

Qgs

Gate-Source Charge

VDS=-10V

3.6

Qgd

Gate-Drain ("Miller") Charge

VGS=-10V

1.5

td(on)

Turn-on Delay Time

VDS=-10V

Rise Time

ID=-1A

td(off)

Turn-off Delay Time

RG=6Ω,VGS=-10V

Fall Time

RD=10Ω

-10

Ciss

Input Capacitance

VGS=0V

760

1140

Coss

Output Capacitance

VDS=-25V

345

518

Crss

Reverse Transfer Capacitance

f=1.0MHz

135

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

Continuous Source Current ( Body Diode )

VD=VG=0V , VS=-1.2V

-1.7

ISM

Pulsed Source Current ( Body Diode )

-20

VSD

Forward On Voltage

Tj=25°C, IS=-1.7A, VGS=0V

-1.2

Notes:

1.Pulse width limited by max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on FR4 board, t<10sec.

4.Pulse width <10us , duty cycle <1%.

± 20V

±100

Rev.2.01 7/01/2004

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