SSM4435M datasheet(2/6 Pages) SSC

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SSM4435M

Electrical Characteristics @ Tj=25

oC (unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-30

∆BV

DSS/

∆Tj

Breakdown Voltage Temperature Coefficient

Reference to 25°C, ID=-1mA

-0.037

V/°C

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V, ID=-8A

Ω

VGS=-4.5V, ID=-5A

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1

-3

gfs

Forward Transconductance

VDS=-15V, ID=-8A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=-30V, VGS=0V

-1

Drain-Source Leakage Current (Tj=70

oC)

VDS=-24V, VGS=0V

-25

IGSS

Gate-Source Leakage

VGS=-

Total Gate Charge

ID=-4.6A

Qgs

Gate-Source Charge

VDS=-15V

5.5

Qgd

Gate-Drain ("Miller") Charge

VGS=-10V

3.5

td(on)

Turn-on Delay Time

VDS=-15V

Rise Time

ID=-1A

td(off)

Turn-off Delay Time

RG=6Ω , VGS=-10V

Fall Time

RD=15Ω

-40

Ciss

Input Capacitance

VGS=0V

1530

Coss

Output Capacitance

VDS=-15V

900

Crss

Reverse Transfer Capacitance

f=1.0MHz

280

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Units

Continuous Source Current ( Body Diode )

VD=VG=0V , VS=-1.2V

-2.1

ISM

Pulsed Source Current ( Body Diode )

-50

VSD

Forward On Voltage

Tj=25°C, IS=-2.1A, VGS=0V

-0.75 -1.2

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on FR4 board, t<10 sec.

± 20V

±100

Rev.2.02 4/18/2004

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