SSM4228M datasheet(2/6 Pages) SSC

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SSM4228M/GM

Electrical Characteristics @ Tj=25

oC (unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

∆BV

DSS/

∆Tj

Breakdown Voltage Temperature Coefficient

Reference to 25°C, ID=1mA

0.03

V/°C

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=6A

Ω

VGS=4.5V, ID=4A

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

gfs

Forward Transconductance

VDS=10V, ID=6A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=30V, VGS=0V

Drain-Source Leakage Current (Tj=70

oC)

VDS=24V ,VGS=0V

IGSS

Gate-Source Leakage

VGS= ± 25V

±100

Total Gate Charge

ID=6A

17.5

Qgs

Gate-Source Charge

VDS=20V

4.7

Qgd

Gate-Drain ("Miller") Charge

VGS=5V

8.5

td(on)

Turn-on Delay Time

VDS=20V

10.6

Rise Time

ID=2A

12.4

td(off)

Turn-off Delay Time

RG=3.3Ω ,VGS=10V

26.2

Fall Time

RD=10Ω

Ciss

Input Capacitance

VGS=0V

1535

Coss

Output Capacitance

VDS=25V

310

Crss

Reverse Transfer Capacitance

f=1.0MHz

200

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Continuous Source Current ( Body Diode )

VD=VG=0V , VS=1.3V

1.7

ISM

Pulsed Source Current ( Body Diode )

VSD

Forward On Voltage

Tj=25°C,IS=1.7A, VGS=0V

1.3

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on FR4 board, t<10 sec.

4.Pulse width <10us , duty cycle <1%.

4/26/2004 Rev.2.10

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