SSM2304N datasheet(2/6 Pages) SSC

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SSM2304N

Electrical Characteristics @ T j=25

oC (unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

∆BV

DSS/ ∆Tj

Breakdown Voltage Temperature Coefficient

Reference to 25°C,ID=1mA

0.1

V/°C

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=2.5A

117

Ω

VGS=4.5V, ID=2A

190

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

gfs

Forward Transconductance

VDS=4.5V, ID=2.5A

3.4

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=25V, VGS=0V

Drain-Source Leakage Current (Tj=55

oC)

VDS=25V ,VGS=0V

IGSS

Gate-Source Leakage

VGS=20V

Total Gate Charge

ID=2.5A

5.9

Qgs

Gate-Source Charge

VDS=15V

0.8

Qgd

Gate-Drain ("Miller") Charge

VGS=10V

2.1

td(on)

Turn-on Delay Time

VDS=15V

4.5

Rise Time

ID=1A

11.5

td(off)

Turn-off Delay Time

RG=6Ω ,VGS=10V

Fall Time

RD=15

Ω

Ciss

Input Capacitance

VGS=0V

110

Coss

Output Capacitance

VDS=15V

Crss

Reverse Transfer Capacitance

f=1.0MHz

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Continuous Source Current ( Body Diode )

VD=VG=0V , VS=1.2V

1.25

ISM

Pulsed Source Current ( Body Diode )

VSD

Forward On Voltage

IS=1.25A, VGS=0V

1.2

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on FR4 board, t < 5 sec.

±100

Rev.2.02 3/11/2004

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