SSM2301N datasheet(2/6 Pages) SSC

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SSM2301N

Electrical Characteristics @ Tj=25

oC (unless otherwise specified)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-20

∆BV

DSS/∆T j

Breakdown Voltage Temperature Coefficient

Reference to 25°C, ID=-1mA

-0.1

V/°C

RDS(ON)

Static Drain-Source On-Resistance

VGS=-5V, ID=-2.8A

130

Ω

VGS=-2.8V, ID=-2.0A

190

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-0.5

gfs

Forward Transconductance

VDS=-5V, ID=-2.8A

4.4

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=-20V, VGS=0V

-1

Drain-Source Leakage Current (Tj=55

oC)

VDS=-16V, VGS=0V

-10

IGSS

Gate-Source Leakage

VGS=-

Total Gate Charge

ID=-2.8A

5.2

Qgs

Gate-Source Charge

VDS=-6V

1.36

Qgd

Gate-Drain ("Miller") Charge

VGS=-5V

0.6

td(on)

Turn-on Delay Time

VDS=-6V

Rise Time

ID=-1A

td(off)

Turn-off Delay Time

RG=6Ω ,VGS=-5V

Fall Time

RD=6Ω

-60

Ciss

Input Capacitance

VGS=0V

295

Coss

Output Capacitance

VDS=-6V

170

Crss

Reverse Transfer Capacitance

f=1.0MHz

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

Continuous Source Current ( Body Diode )

VD=VG=0V , VS=-1.2V

-1.6

ISM

Pulsed Source Current ( Body Diode )

-10

VSD

Forward On Voltage

Tj=25°C, IS=-1.6A, VGS=0V

-1.2

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on FR4 board, t < 5 sec.

± 8V

±100

Rev.2.02 3/11/2004

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