N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

07/11/2007 Rev.1.00

www.SiliconStandard.com

1

SSM95T07GP

PRODUCT SUMMARY

Simple Drive Requirement

Lower On-resistance

Fast Switching Characteristic

RoHS Compliant

DESCRIPTION

The advanced power MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-

industrial power applications and suited for low voltage applications

such as DC/DC converters.

ABSOLUTE MAXIMUM RATINGS

G

D

S

G

D

S

TO-220(P)

75V

5mΩ

80A

Symbol

Units

V

V

A

A

A

W

W/℃

mJ

℃

℃

Symbol

Value

Units

Rthj-c

Thermal Resistance Junction-case

Max.

0.5

℃

/W

Rthj-a

Thermal Resistance Junction-ambient

Max.

62

℃

/W

THERMAL DATA

Parameter

Storage Temperature Range

Total Power Dissipation

300

-55 to 175

Operating Junction Temperature Range

-55 to 175

Linear Derating Factor

2

70

320

Gate-Source Voltage

±20

80

Parameter

Rating

Drain-Source Voltage

75

450