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N-channel Enhancement-mode Power MOSFET

Low gate-charge

30V

Simple drive requirement

4m

Ω

Fast switching

75A

DESCRIPTION

G

D

S

G D

S

TO-263 (S)

G

D

S

TO-220 (P)

The SSM90T03GS is in a TO-263 package, which is widely used for

commercial and industrial surface mount applications. This device is

suitable for low voltage applications such as DC/DC converters.

The through-hole version, the SSM90T03GP in TO-220, is available for

vertical-mounting, where a small footprint is required on the board, and/or

an external heatsink is to be attached.

SSM90T03GP,S

2/17/2005 Rev.2.3

ABSOLUTE MAXIMUM RATINGS

Symbol

Units

V

V

A

W/°C

Single Pulse Avalanche Energy

3

mJ

Symbol

Value

Units

Maximum Thermal Resistance, Junction-case

1.3

°C/W

Maximum Thermal Resistance, Junction-ambient

62

°C/W

THERMAL DATA

Parameter

Storage Temperature Range

Total Power Dissipation

96

W

-55 to 150

°C

Operating Junction Temperature Range

-55 to 150

°C

Linear Derating Factor

0.7

29

63

A

Pulsed Drain Current

1

350

Gate-Source Voltage

±20

75

A

Parameter

Rating

Drain-Source Voltage

30

Pb-free, RoHS compliant.