N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

08/06/2007 Rev.1.00

www.SiliconStandard.com

1

SSM85T08GP

PRODUCT SUMMARY

Simple Drive Requirement

Low On-resistance

Fast Switching Characteristic

DESCRIPTION

The Advanced Power MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The TO-263 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters.

The through-hole version

(SSM85T08GP) are available for low-profile applications.

ABSOLUTE MAXIMUM RATINGS

80V

13mΩ

75A

G

D

S

G D

S

TO-263(S)

G

D

S

TO-220(P)

Symbol

Units

V

V

A

A

A

W

W/℃

Single Pulse Avalanche Energy

3

mJ

Avalanche Current

A

℃

℃

Symbol

Value

Units

Rthj-c

Thermal Resistance Junction-case

Max.

0.9

℃/W

Rthj-a

Thermal Resistance Junction-ambient

Max.

62

℃/W

THERMAL DATA

Parameter

Storage Temperature Range

Total Power Dissipation

138

-55 to 150

Operating Junction Temperature Range

-55 to 150

Linear Derating Factor

1.11

48

Pulsed Drain Current

1

260

Gate-Source Voltage

±20

75

Parameter

Rating

Drain-Source Voltage

80

450

30

Pb-free; RoHS-compliant