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HFS8N65S датащи(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS8N65S датащи(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 7 page ![]() ◎ SEMIHOW REV.A0,Sep 2009 V GS, Gate-Source Voltage [V] Typical Characteristics 0.2 0.4 0.6 0.8 1.0 1.2 10 -1 10 0 10 1 150 oC ∗ Note : 1. V GS = 0V 2. 250 µs Pulse Test 25 oC V SD, Source-Drain voltage [V] 0 3 6 9 12 15 0.5 1.0 1.5 2.0 2.5 V GS = 20V V GS = 10V ∗ Note : T J = 25 oC I D, Drain Current [A] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics V DS, Drain-Source Voltage [V] V DS, Drain-Source Voltage [V] 0 4 8 12 16 20 24 0 2 4 6 8 10 12 Q G, Total Gate Charge [nC] V DS = 130V V DS = 325V V DS = 520V * Note : I D=7.2A |
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