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HFD1N65 датащи(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFD1N65 датащи(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 8 page ![]() ◎ SEMIHOW REV.A0,Apr 2006 10 -1 10 0 10 1 0 50 100 150 200 250 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] Typical Characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 15 20 25 30 35 40 ※ Note : T J = 25 ℃ V GS = 20V V GS = 10V I D , Drain Current [A] 0 1 2 3 4 5 0 2 4 6 8 10 12 V DS = 325V V DS = 130V V DS = 520V ※ Notes : I D = 0.8 A Q G, Total Gate Charge [nC] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics |
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