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SS6611GOTR датащи(PDF) 11 Page - Silicon Standard Corp.

номер детали SS6611GOTR
подробное описание детали  High-efficiency Synchronous Step-up DC/DC Converter
PDF  16 Pages
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производитель  SSC [Silicon Standard Corp.]
домашняя страница  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SS6611GOTR датащи(HTML) 11 Page - Silicon Standard Corp.

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SS6610/11G
4/21/2006 Rev.3.01
PIN DESCRIPTIONS
PIN 1: FB
Connect to pin 8:OUT to get +3.3V
output, connect to pin 6:GND to get
+5.0V output, or use a resistor
network to set the output voltage
between +1.8V and +5.5V.
PIN 2: LBI
Low-battery comparator input.
Internally set at +1.23V to trip.
PIN 3: LBO
Open-drain low-battery comparator
output. Output is low when VLBI is
<1.23V. LBO is high-impedance
during shutdown.
PIN 4: REF
1.23V reference voltage. Bypass
with a 0.1
µF capacitor.
PIN 5: SHDN Shutdown input. High = operating,
low = shutdown.
PIN 6: GND
Ground
PIN 7: LX
N-channel and P-channel power
MOSFET drain.
PIN 8: OUT
Power output. OUT provides the
bootstrap power to the IC.
APPLICATION INFORMATION
Overview
The SS6610/11 series are high-efficiency, step-up DC/DC
converters, featuring a built-in synchronous
rectifier, which reduces size and cost by eliminating
the need for an external Schottky diode. The start-up
voltage of the SS6610 and SS6611 is as low as
0.8V and they operate with an input voltage down
to 0.7V. Quiescent supply current is only 20
µA.
The internal P-MOSFET on-resistance is typically
0.3
Ω to improve overall efficiency by minimizing AC
losses. The output voltage can be easily set using
two external resistors for 1.8V to 5.5V; connecting
FB to OUT to get 3.3V; or connecting to GND to get
5.0V. The peak current of the internal switch is fixed
at 1.0A (SS6610) or 0.65A (SS6611) for design
flexibility. The current limits of the SS6610 and SS6611
are 1.0A and 0.65A respectively. The lower current
limit allows the use of a physically smaller inductor in
space-sensitive applications.
PFM Control Scheme
A key feature of the SS6610 series is a unique
minimum-off-time, constant-on-time, current-limited,
pulse-frequency-modulation (PFM) control scheme
(see BLOCK DIAGRAM) with ultra-low quiescent
current. The peak current of the internal N-MOSFET
power switch can be fixed at 1.0A (SS6610) or
0.65A (SS6611). The switch frequency depends on
either loading conditions or input voltage, and can
range up to 500KHz. It is governed by a pair of one-
shots that set a minimum off-time (1
µs) and a
maximum on-time (4
µs).
Synchronous Rectification
Using the internal synchronous rectifier eliminates
the need for an external Schottky diode, reducing
the cost and board space. During the cycle of off-
time, the P-MOSFET turns on and shuts the N-
MOSFET off. Due to the low turn-on resistance
of the MOSFET, the synchronous rectifier signif-
cantly improves efficiency without an additional ex-
ternal Schottky diode. Thus, the conversion effi-
ciency can be as high as 93%.
Reference Voltage
The reference voltage (REF) is nominally 1.23V for
excellent T.C. performance. In addition, the REF pin can
source up to 100
µA to an external circuit with good load
regulation (<10mV). A bypass capacitor of 0.1
µF is
required for proper operation and good performance.



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