CSL13003 datasheet(1/5 Pages) RECTRON

номер детали	CSL13003

подробное описание детали	NPN SILICON PLANAR EPITAXIAL,HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR

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производитель	RECTRON [Rectron Semiconductor]

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Applications

Suitable for Lighting, Switching Regulator and Motor Control

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

Collector Base Voltage

VCBO

Collector Emitter (sus) Voltage

VCEO

Emitter Base Voltage

VEBO

Collector Current Continuous

IC

Peak

**ICM

Power Dissipation @ Ta=25ºC

PC

Derate Above 25ºC

Power Dissipation @ TLead=25ºC

PD

Derate Above 25ºC

Operating And Storage Junction Temperature

Range

Tj, Tstg

THERMAL RESISTANCE

Junction to Case, Tc=25ºC

Rth (j-c)

Junction to Lead

Rth (j-L)

Junction to Ambient in free air

Rth (j-a)

`

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP MAX

UNIT

Collector Base Voltage

VCBO

IC=1mA, IE=0

600

V

Collector Emitter (sus) Voltage

*VCEO (sus)

IC=10mA, IB=0

400

V

Collector Cut Off Current

ICBO

VCB=600V, IE=0

1.0

mA

VCB=600V, IE=0, Tc=100ºC

5.0

mA

Emitter Cut Off Current

IEBO

VEB=9V, IC=0

1.0

mA

DC Current Gain

*hFE

IC=0.3A, VCE=2V (Note1)

10

30

IC=0.5A, VCE=2V

8.0

40

IC=1A, VCE=2V

4.0

25

Collector Emitter Saturation Voltage

*VCE (sat)

IC=0.5A, IB=0.1A

0.5

V

IC=1A, IB=0.25A

1.0

V

IC=1.5A, IB=0.5A

3.0

V

IC=1A, IB=0.25A,Tc=100ºC

1.0

V

Base Emitter Saturation Voltage

*VBE (sat)

IC=0.5A, IB=0.1A

1.0

V

IC=1A, IB=0.25A

1.2

V

IC=1A, IB=0.25A,Tc=100ºC

1.1

V

* Pulse Test: PW=300m

m

s, Duty Cycle=2%

** Pulse Test: Pulse Width=5ms, Duty Cycle=10%

48.0

ºC/W

62.5

ºC/W

VALUE

600

400

9.0

1.5

3.0

- 65 to +150

A

W

ºC

mW/ ºC

1.1

W

UNIT

V

8.8

mW/ ºC

113.6

2.0

16

ºC/W

E C

B

TO-92 PLASTIC PACKAGE

NPN SILICON PLANAR EPITAXIAL,HIGH SPEED,

HIGH VOLTAGE SWITCHING TRANSISTOR

CSL13003

Аналогичный номер детали - CSL13003

производитель	номер детали	датащи	подробное описание детали
Continental Device Indi...	CSL13003	84Kb / 5P	NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR
	CSL13003A	84Kb / 5P	NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR
	CSL13003B	84Kb / 5P	NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR
	CSL13003C	84Kb / 5P	NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR
	CSL13003E	84Kb / 5P	NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR

More results

Аналогичное описание - CSL13003

производитель	номер детали	датащи	подробное описание детали
KEC(Korea Electronics)	KTH2369	309Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH SPEED SWITCHING)
	KTN2369S	155Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH SPEED SWITCHING)
	KTN2369U	152Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH SPEED SWITCHING)
Continental Device Indi...	CSL13003	84Kb / 5P	NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR
Continental Device Indi...	CSL13002	136Kb / 4P	NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR
Sanyo Semicon Device	CPH3248	41Kb / 4P	NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
	2SC6096	41Kb / 4P	NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
	2SC6099	44Kb / 4P	NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
Continental Device Indi...	CSD13002	115Kb / 4P	NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR
Sanyo Semicon Device	PCP1202	59Kb / 4P	NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

More results

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Аналогичный номер детали - CSL13003

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