VRF148A datasheet(2/5 Pages) MICROSEMI

2 / 5 page

0.1

100

200

VRF148A

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

ISS

Input Capacitance

GS = 0V

160

oss

Output Capacitance

DS = 50V

rss

Reverse Transfer Capacitance

f = 1MHz

2.6

Class A Characteristics

Symbol

Test Conditions

Min

Typ

Max

Unit

1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 1.0A, Pout = 10WPEP

IMD

(d3)

1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 1.0A, Pout = 10WPEP

-50

IMD

(d9-d13)

1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 1.0A, Pout = 10WPEP

-70

Functional Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

1 = 30MHz, VDD = 50V, IDQ = 100mA, Pout = 30W

1 = 175MHz, VDD = 50V, IDQ = 100mA, Pout = 30W

1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 100mA, 30 WPEP

1 = 30MHz, VDD = 50V, IDQ = 100mA, 30 WCW

IMD

(d3)

1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 100mA, Pout = 30WPEP

-35

-28

IMD

(d11)

1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 100mA, Pout = 30WPEP

-60

1= 30MHz, f2 = 30.001MHz ,VDD = 50V, IDQ = 100mA, Pout = 300WPEP

30:1 VSWR - All Phase Angles

No Degradation in Output Power

1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone

Microsemi reserves the right to change, without notice, the speciﬁcations and information contained herein.

100

DS(ON), DRAIN-TO-SOURCE VOLTAGE (V)

FIGURE 1, Output Characteristics

DS, GATE-TO-SOURCE VOLTAGE (V)

FIGURE 3, Capacitance vs Drain-to-Source Voltage

DS, DRAIN-TO-SOURCE VOLTAGE (V)

FIGURE 4, Forward Safe Operating Area

DS, DRAIN-TO-SOURCE VOLTAGE (V)

FIGURE 2, Transfer Characteristics

Typical Performance Curves

10V

13V

J= 125°C

250μs PULSE

TEST<0.5 % DUTY

CYCLE

J= -55°C

J= 25°C

iss

oss

rss

Rds(on)

= 125°C

= 75°C

Pdmax

DMax

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