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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MP6T1 датащи(PDF) 2 Page - Rohm |
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MP6T1 датащи(HTML) 2 Page - Rohm |
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2 / 4 page  MP6T1 Transistors Rev.A 2/3 Electrical characteristics (Ta=25 °C) Parameter Collector-Emitter breakdown voltage Collector-base breakdown voltage <Tr1, Tr2> Emitter-base breakdown voltage Collector cut off current Emitter cut off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. −32 −40 −5 − − 120 − − − − − − − − − − 150 20 − − − −500 −500 390 −500 ∗ − − V IC = −1mA IC = −50µA IE = −50µA VCB = −20V VEB = −4V VCE = −3V, IC= −100mA IC/IB = −500mA/−50mA VCE = −5V, IE= 50mA, f=100MHz VCB = −10V, IE=0A, f=1MHz V V nA nA − mV MHz pF Typ. Max. Unit Conditions ∗ Pulsed Electrical characteristics curves Fig.1 Grounded Emitter Propagation Characteristics 0 -1 -2 -5 -20 -200 -500 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -10 -50 -100 VCE = −6V BASE TO EMITTER VOLTAGE : VBE (V) Ta =100 C 25 C −55 C 0 0 −100 −400 −500 −0.4 −0.8 −1.2 −1.6 −200 −300 −2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded Emitter Output Characteristics IB =0mA −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 −3.5 −4.0 −4.5 −5.0 Ta =25 C COLLECTOR CURRENT : IC (mA) Fig.3 DC Current Gain vs. Collector Current ( Ι ) −1 50 100 1000 −2 −5 −10 −20 −50 −100 −200 −500 200 500 −1000 Ta =25 C −1V VCE = −3V 50 100 1000 200 500 −1 −2 −5 −10 −20 −50 −100 −200 −500−1000 VCE = −3V COLLECTOR CURRENT : IC (mA) Fig.4 DC Current Gain vs. Collector Current ( ΙΙ) Ta =100 C 25 C −55 C −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000−2000 COLLECTOR CURRENT : IC (mA) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current −1 −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 Ta =25 C IC/IB =10 −1 −2 −5 −10 −20 −50 −100 −0.2 0 −0.4 −0.6 −0.8 −1.0 BASE CURRENT : IB (mA) Fig.6 Collector-Emitter Saturation Voltage vs. Base Current lC = −500mA lC = −300mA Ta =25 C |
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