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INA333-HT датащи(PDF) 7 Page - Texas Instruments

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номер детали INA333-HT
подробное описание детали  Micro-Power, Zer첩-Drift, Rail-to-Rail Out Instrumentation Amplifier
PDF  24 Pages
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производитель  TI [Texas Instruments]
домашняя страница  http://www.ti.com
Logo TI - Texas Instruments

INA333-HT датащи(HTML) 7 Page - Texas Instruments

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1
10
100
1000
10000
100000
1000000
110
130
150
170
190
210
230
Continous TJ (°C)
Electromigration Fail Mode
Notes
1. See datasheet for absolute maximum and minimum recommended operating conditions.
2. Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package
interconnect life).
www.ti.com
SBOS514 – MARCH 2010
ELECTRICAL CHARACTERISTICS: VS = +1.8 V to +5.5 V (continued)
At TA = +25°C, RL = 10kΩ, VREF = VS/2, and G = 1, unless otherwise noted.
TA = –55°C to +125°C
TA = +210°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
G = 1
VSTEP = 4 V
60
55
ms
G = 100
VSTEP = 4 V
500
530
ms
Overload recovery
50% overdrive
52
28
ms
REFERENCE INPUT
RIN
300
300
k
Ω
Voltage range
V–
V+
V–
V+
V
POWER SUPPLY
Voltage range
Single
+1.8
+5.5
+1.8
+5.5
V
Dual
±0.9
±2.75
±0.9
±2.75
V
Quiescent current
IQ
VIN = VS/2
50
75
mA
vs Temperature
80
198
345
mA
TEMPERATURE RANGE
Specified temperature
–55
+125
–55
+210
°C
range
Operating temperature
–55
+125
–55
+210
°C
range
Figure 1. INA333SKGD1 Operating Life Derating Chart
Copyright © 2010, Texas Instruments Incorporated
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