2N4261 datasheet(2/4 Pages) MICROSEMI

номер детали	2N4261

подробное описание детали	PNP SMALL SIGNAL SILICON TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

производитель	MICROSEMI [Microsemi Corporation]

домашняя страница	http://www.microsemi.com

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2 / 4 page

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

PNP SMALL SIGNAL SILICON TRANSISTOR

Qualified per MIL-PRF-19500/511

T4-LDS-0150 Rev. 1 (092064)

Page 2 of 4

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

ON CHARACTERISTICS

(4)

Forward-Current Transfer Ratio

IC = 1.0mAdc, VCE = 1Vdc

IC = 10mAdc, VCE = 1Vdc

150

IC = 30mAdc, VCE = 1Vdc

hFE

Collector-Emitter Saturation Voltage

IC = 1mAdc, IB = 0.1mAdc

IC = 10mAdc, IB = 1.0mAdc

VCE(sat)

0.15

0.35

Vdc

Base-Emitter Saturation Voltage (Non-Saturated)

VCE = 1Vdc, IC = 1mAdc

VCE = 1Vdc, IC = 10mAdc

VBE

0.6

0.80

1.0

Vdc

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Magnitude of Small–Signal Forward Current Transfer Ratio

IC = 10mAdc, VCE = 10Vdc, f = 100MHz

|hfe|

Output Capacitance

VCB = 4Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz

Cobo

2.5

Input Capacitance

VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz

Cibo

2.5

SWITCHING CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Turn-On Time

VCC = 17Vdc; IC = 10mAdc

ton

2.5

ηs

Turn-Off Time

VCC = 17Vdc; IC = 10mAdc

toff

3.5

ηs

(4) Pulse Test: Pulse Width = 300

μs, Duty Cycle ≤ 2.0%.

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