GC4210 – GC4275

Microsemi

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

Page 1

CONTROL DEVICES – HIGH SPEED PIN DIODES

TM

®

Copyright

 2006

Rev.: 2009-02-19

RoHS Compliant

HU

www.MICROSEMI.com

UH

Specifications are subject to change, consult factory for the latest information.

These devices are ESD sensitive and must be handled use using ESD precautions.

D E SCRI PTI ON

The GC4200 series are high speed (cathode base) PIN diodes

made with high resistivity epitaxial silicon material. These diodes

are passivated with silicon dioxide for high stability and reliability

and have been proven by thousands of device hours in high

reliability systems.

These devices can withstand storage temperatures from -65°C to

+200°C and will operate over the range from -55°C to +150°C. All

devices meet or exceed military environmental specifications of

MIL-PRF-19500. The GC4200 series will operate with as little as

+10 mA forward bias.

This series of diodes meets RoHS requirements per EU Directive

2002/95/EC. The standard terminal finish is gold unless otherwise

specified. Consult the factory if you have special requirements.

APPLICATIONS/BENEFITS



RF / Microwave Switching



Duplexers



Digital Phase Shifting



Phase Array Radar

2B

APPLICATIONS

The GC4200 series can be used in RF circuits as an on/off element,

as a switch, or as a current controlled resistor in attenuators

extending over the frequency range from UHF through Ku band.

Switch applications include high speed switches (ECM systems), TR

switches, channel or antenna selection switches

(telecommunications), duplexers (radar) and digital phase shifters

(phased arrays).

The GC4200 series are also used as passive and active limiters for

low to moderate RF power levels.

Attenuator type applications include amplitude modulators, AGC

attenuators, power levelers and level set attenuators.

ABSOLUTE MAXIMUM RATINGS AT 25º C

3B

(UNLESS OTHERWISE SPECIFIED)

Rating

Symbol

Value

Unit

Maximum Leakage Current

0.5

uA

Storage Temperature

-65 to +200

ºC

Operating Temperature

-55 to +150

ºC

KEY FEATURES



Available as packaged devices or

as chips for hybrid applications



Low Loss



Suitable for application to 18Ghz



High Speed



Low Insertion Loss



High Isolation



RoHS Compliant

1

Gold plated terminations. Other terminal

finishes are available on request. Consult

factory for details.