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GC2520 датащи(PDF) 2 Page - Microsemi Corporation

номер детали GC2520
подробное описание детали  POWER GENERATION Step Recovery Diodes
PDF  3 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

GC2520 датащи(HTML) 2 Page - Microsemi Corporation

  GC2520 Datasheet HTML 1Page - Microsemi Corporation GC2520 Datasheet HTML 2Page - Microsemi Corporation GC2520 Datasheet HTML 3Page - Microsemi Corporation  
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GC2510 – GC2546
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
TM
®
Copyright
 2007
Rev.: 2009-02-03
RoHS Compliant
POWER GENERATION
Step Recovery Diodes
CHIP ELECTRICAL PARAMETERS @ 25
C (unless otherwise specified)
Model Number
Vb(V)
IR=10μA
(Min)
Cj(pF)
1
@-6V
TL(ns)
2
(Min)
T
Notes:
T(ps)
(Typ)
Rs(Ω)
3
@25 mA
(Max)
P1(˚C/W)4
(Max)
GC2510
15
0.2-0.4
8
60
1.2
125
GC2511
15
0.4-0.6
8
60
1.0
100
GC2512
15
0.6-0.8
8
60
0.7
100
GC2513
15
0.8-1.0
8
60
0.5
75
GC2514
15
1.0-1.4
8
60
0.4
75
GC2515
15
1.4-2.0
8
60
0.3
60
GC2516
15
2.0-3.0
8
60
0.25
60
GC2520
20
0.2-0.4
11
70
1.0
100
GC2521
20
0.4-0.6
11
70
0.7
75
GC2522
20
0.6-0.8
11
70
0.6
75
GC2523
20
0.8-1.0
11
70
0.5
75
GC2524
20
1.0-1.4
11
70
0.4
75
GC2525
20
1.4-2.0
11
70
0.3
60
GC2526
20
2.0-3.0
11
70
0.25
60
GC2530
30
0.2-0.4
17
100
0.8
75
GC2531
30
0.4-0.6
17
100
0.6
60
GC2532
30
0.6-0.8
17
100
0.5
60
GC2533
30
0.8-1.0
17
100
0.4
60
GC2534
30
1.0-1.4
17
100
0.3
60
GC2535
30
1.4-2.0
17
100
0.25
50
GC2536
30
2.0-3.0
17
100
0.2
50
GC2540
40
0.2-0.4
21
150
0.8
60
GC2541
40
0.4-0.6
21
150
0.6
50
GC2542
40
0.6-0.8
21
150
0.5
50
GC2543
40
0.8-1.0
21
150
0.4
50
GC2544
40
1.0-1.4
21
150
0.3
50
GC2545
40
1.4-2.0
21
150
0.25
40
GC2546
40
2.0-3.0
21
150
0.2
40
1.
Junction capacitance is measure at 1 MHz.
2.
Carrier lifetime is measure at IF = 10mA, IR = 6mA .
3.
Series resistance is measure using a transmission loss technique @ 1 GHz.
4.
Thermal resistance is measure using pulsed conditions while measuring forward voltage drop
across the diode mounted in an infinite heat sink.



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