DRF1301

MOSFET Specifications (Per-Section)

Symbol

Parameter

Min

Typ

Max

Unit

BV

DSS

Drain Source Voltage

1000

V

I

D

Continuous Drain Current T

15

A

R

DS(on)

Drain-Source On State Resistance

1

Ω

Dynamic Characteristics (Per-Section)

Section A and B Output Switching Performance

Symbol

Characteristic

Min

Typ

Max

Typ

T

ON

Leading Edge 10% to 90%

2

3

4

ns

T

OFF

Trailing Edge 10% to 90%

45

TBD

49

T

DLY(ON)

Total Throughput Delay Time, ON

45

TBD

47

T

DLY(OFF)

Total Throughput Delay Time, OFF

49

50

51

∆T

DLY(ON)

Delta T

-0.5

0

1.5

∆T

DLY(OFF)

Delta T

0

0.6

1.3

Symbol

Parameter

Min

Typ

Max

Unit

C

ISS

Input Capacitance

1800

pF

C

oss

Output Capacitance

335

C

rss

Reverse Transfer Capacitance

75

Thermal Characteristics (Total Package)

Symbol

Parameter

Ratings

Unit

Junction to Case Thermal Resistance

.06

°C/W

Junction to Heat Sink Thermal Resistance

.134

T

JSTG

Storage Junction Temperature

-55 to 150

°C

P

D

Maximum Power Dissipation @ T

1.1

KW

P

DC

Total Power Dissipation @ T

2.5

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Figure 1, DRF1301 Circuit Diagram

The DRF1301 is configured as a Push Pull Hybrid incorporating two independent channels configured with a common source each consisting of a

driver, a high voltage MOSFET and by-pass capacitors. The function of the by-pass capacitors C1 and C2 is to reduce the internal parasitic loop

inductance. This coupled with the tight geometry of the hybrid allows optimal gate drive to the MOSFET. This low parasitic approach coupled

with the Schmitt trigger input (IN), Kelvin signal ground (SG) and the Anti-Ring function; provide improved stability and control in Kilowatt to Multi-

Kilowatt high frequency applications. The IN pin should be referenced to the Kelvin Ground (SG) and is applied to a Schmitt Trigger. The SG

pin is a Kelvin return for the IN pin only. The signal is then applied to the intermediate drivers and level shifters; this section contains proprietary

circuitry designed specifically for ring abatement. To further increase the utility of the device the driver die and the MOSFET die are adjacent die

selected. This provides a very close match in the turn on and propagation delays.