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DRF1202 датащи(PDF) 3 Page - Microsemi Corporation

номер детали DRF1202
подробное описание детали  MOSFET Driver Hybrid
PDF  4 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

DRF1202 датащи(HTML) 3 Page - Microsemi Corporation

  DRF1202 Datasheet HTML 1Page - Microsemi Corporation DRF1202 Datasheet HTML 2Page - Microsemi Corporation DRF1202 Datasheet HTML 3Page - Microsemi Corporation DRF1202 Datasheet HTML 4Page - Microsemi Corporation  
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The Function (FN, pin 3) is the invert or non-invert select Pin, it is Internally held high.
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.
DRF1202
The Test Circuit illustrated above was used to evaluate the DRF1202 (available as an evaluation Board DRF12XX / EVALSW.) The input
control signal is applied to the DRF1202 via IN(4) and SG(5) pins using RG188. This provides excellent noise immunity and control of the
signal ground currents.
The +V
DD inputs (2,6) are by-passed (C1,C2, C4-C9), this is in addition to the internal by-passing mentioned previously. The capacitors used
for this function must be capable of supporting the RMS currents and frequency of the gate load. A 50Ω (R4) load is used to evaluate the
output performance of the DRF1202.
Figure 2, DRF1202 Test Circuit
Truth Table *Referenced to SG
FN (pin 3)*
IN (pin 4)*
MOSFET
HIGH
HIGH
ON
HIGH
LOW
OFF
LOW
HIGH
OFF
LOW
LOW
ON



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