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DRF200G датащи(PDF) 2 Page - Microsemi Corporation

номер детали DRF200G
подробное описание детали  MOSFET Driver
PDF  4 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

DRF200G датащи(HTML) 2 Page - Microsemi Corporation

  DRF200G Datasheet HTML 1Page - Microsemi Corporation DRF200G Datasheet HTML 2Page - Microsemi Corporation DRF200G Datasheet HTML 3Page - Microsemi Corporation DRF200G Datasheet HTML 4Page - Microsemi Corporation  
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DRF200G
Output Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
out
Output Resistance
1
Ω
F
MAX
Operating Frequency CL=3000nF + 50Ω
15
MHz
F
MAX
Operating Frequency RL=50Ω
30
Thermal Characteristics
Symbol
Parameter
Ratings
Unit
JC
Thermal Resistance Junction to Case
1.4
°C/W
JHS
Thermal Resistance Junction to Heat Sink
2.2
T
JSTG
Storage Temperature
-55 to 150
°C
T
JMAX
Maximum Junction Temperature
175
P
D
Maximum Power Dissipation @ T
SINK = 25°C
>60
W
P
DC
Total Power Dissipation @ T
C = 25°C
>100
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Figure 1, DRF100 Simplified Circuit Diagram
The Simplified DRF100 Circuit Diagram is illustrated above. The Schmitt trigger input (pin 1), Kelvin signal ground (pin 2) and the Anti-Ring
Function, provide improved stability and control. The IN pin (1) is applied to a Schmitt Trigger. The signal is then applied to the intermediate
drivers and level shifters; this section contains proprietary circuitry designed specifically for ring abatement. The P channel and N channel
power drivers provide the high current to the OUTPUT (pin 5.)



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