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ARF461B датащи(PDF) 2 Page - Microsemi Corporation |
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ARF461B датащи(HTML) 2 Page - Microsemi Corporation |
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2 / 4 page ![]() 30 45 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency Class C V DD = 150V P out = 150W 30 25 20 15 10 5 0 ARF461A/B 1 Pulse Test: Pulse width < 380 μS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 1 10 100 1000 8 6 4 2 0 0 2 4 6 8 V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 5000 1000 500 100 50 10 .1 .5 1 5 10 50 200 V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area V GS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics V DS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE T J = -55°C T J = -55°C T J = +125°C T J = +25°C T C =+25°C T J =+150°C SINGLE PULSE OPERATION HERE LIMITED BY R DS (ON) C iss C oss C rss 26 10 5 1 .5 .1 1mS 10mS 100mS DC 100uS Dynamic Characteristics Symbol Parameter Test Conditions Min Typ Max Unit C ISS Input Capacitance V GS = 0V V DS = 50V f = 1MHz 1700 pF C oss Output Capacitance 175 C rss Reverse Transfer Capacitance 50 t d(on) Turn-On Delay Time V GS = 15V V DD = 0.5VDSS I D = ID (Cont.) @ 25°C R G = 1.6Ω 8 ns t r Rise Time 5 t d(off) Turn-off Delay Time 21 t f Fall Time 10.1 Functional Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit G PS Common Source Amplifier Power Gain f = 40.68MHz V GS = 0V V DD = 250V P OUT = 150W 13 15 dB η Drain Efficiency 70 75 % Ψ Electrical Ruggedness VSWR 10:1 No Degradation in Output Power |
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