ARF460A/G

ARF460B/G

125V, 150W, 65MHz

The ARF460A and ARF460B comprise a symmetric pair of common source RF power

transistors designed for push-pull scientific, commercial, medical and industrial RF power

amplifier applications up to 65MHz. They have been optimized for both linear and high

efficiency classes of operation.

• Low Cost Common Source RF Package.

• Low Vth thermal coefficient.

• Low Thermal Resistance.

• Optimized SOA for Superior Ruggedness

• RoHS Compliant

Symbol

Parameter

ARF460AG/BG

Unit

V

DSS

Drain-Source Voltage

500

V

V

DGO

Drain-Gate Voltage

500

I

D

Continuous Drain Current @ T

14

A

V

GS

Gate-Source Voltage

±30

V

P

D

Total Power Dissipation @ T

250

W

R

Junction to Case

0.50

°C/W

T

Operating and Storage Junction Temperature Range

-55 to 150

°C

T

L

Lead Temperature: 0.063” from Case for 10 Sec.

300

Maximum Ratings

All Ratings: T

Static Electrical Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

BV

DSS

Drain-Source Breakdown Voltage (V

500

V

V

DS(ON)

4

I

DSS

Zero Gate Voltage Drain Current (V

25

μA

Zero Gate Voltage Drain Current (V

250

I

GSS

Gate-Source Leakage Current (V

±100

nA

g

fs

Forward Transconductance (V

3.3

5.5

8

mhos

V

GS(TH)

Gate Threshold Voltage (V

3

5

Volts

Microsemi Website - http://www.microsemi.com

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

RF POWER MOSFET

N-CHANNEL ENHANCEMENT MODE

• Specified 125 Volt, 40.68MHz Characteristics:

Output Power = 150 Watts.

Gain = 13dB (Class AB)

Efficiency = 75% (Class C)

TO

-2

47

Common

Source