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APTM120A80FT1G датащи(PDF) 5 Page - Microsemi Corporation |
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APTM120A80FT1G датащи(HTML) 5 Page - Microsemi Corporation |
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5 / 5 page ![]() APTM120A80FT1G www.microsemi.com 5 – 5 TJ=25°C TJ=125°C 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Source to Drain Voltage (V) Drain Current vs Source to Drain Voltage 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.1 0.2 0.3 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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