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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APTM100A23STG датащи(PDF) 1 Page - Microsemi Corporation |
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APTM100A23STG датащи(HTML) 1 Page - Microsemi Corporation |
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1 / 7 page  APTM100A23STG www.microsemi.com 1 – 7 NTC2 OUT VBUS NTC1 0/VBUS Q1 G1 Q2 S1 S2 G2 NTC2 S1 OUT OUT NTC1 VBUS 0/VBUS G2 S2 G1 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 1000 V Tc = 25°C 36 ID Continuous Drain Current Tc = 80°C 27 IDM Pulsed Drain current 144 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 270 m Ω PD Maximum Power Dissipation Tc = 25°C 694 W IAR Avalanche current (repetitive and non repetitive) 18 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 2500 mJ VDSS = 1000V RDSon = 230mΩ typ @ Tj = 25°C ID = 36A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Phase leg Series & parallel diodes MOSFET Power Module |
Аналогичный номер детали - APTM100A23STG |
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Аналогичное описание - APTM100A23STG |
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