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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APTM50HM35FG датащи(PDF) 2 Page - Microsemi Corporation |
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APTM50HM35FG датащи(HTML) 2 Page - Microsemi Corporation |
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2 / 6 page  APTM50HM35FG www.microsemi.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 500V Tj = 25°C 200 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 400V Tj = 125°C 1000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 49.5A 35 39 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 14 Coss Output Capacitance 2.8 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.2 nF Qg Total gate Charge 280 Qgs Gate – Source Charge 80 Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 99A 140 nC Td(on) Turn-on Delay Time 21 Tr Rise Time 38 Td(off) Turn-off Delay Time 75 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 99A RG = 1Ω 93 ns Eon Turn-on Switching Energy 2070 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 99A, RG = 1Ω 1690 µJ Eon Turn-on Switching Energy 3112 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 99A, RG = 1Ω 2026 µJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 99 IS Continuous Source current (Body diode) Tc = 80°C 74 A VSD Diode Forward Voltage VGS = 0V, IS = - 99A 1.3 V dv/dt Peak Diode Recovery 15 V/ns Tj = 25°C 270 trr Reverse Recovery Time Tj = 125°C 540 ns Tj = 25°C 5.2 Qrr Reverse Recovery Charge IS = - 99A VR = 333V diS/dt = 200A/µs Tj = 125°C 19.2 µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 99A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C |
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