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APTM50DHM65T3G датащи(PDF) 4 Page - Microsemi Corporation

номер детали APTM50DHM65T3G
подробное описание детали  Asymmetrical - Bridge MOSFET Power Module
PDF  5 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM50DHM65T3G датащи(HTML) 4 Page - Microsemi Corporation

  APTM50DHM65T3G Datasheet HTML 1Page - Microsemi Corporation APTM50DHM65T3G Datasheet HTML 2Page - Microsemi Corporation APTM50DHM65T3G Datasheet HTML 3Page - Microsemi Corporation APTM50DHM65T3G Datasheet HTML 4Page - Microsemi Corporation APTM50DHM65T3G Datasheet HTML 5Page - Microsemi Corporation  
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APTM50DHM65T3G
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Typical MOSFET Performance Curve
Low Voltage Output Characteristics
TJ=25°C
TJ=125°C
0
50
100
150
200
250
0
5
10
15
20
VDS, Drain to Source Voltage (V)
VGS=10V
Low Voltage Output Characteristics
5.5V
6V
6.5V
0
20
40
60
80
100
120
140
160
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V)
VGS=7,8 &10V
TJ=125°C
Normalized RDSon vs. Temperature
0.5
1
1.5
2
2.5
25
50
75
100
125
150
TJ, Junction Temperature (°C)
VGS=10V
ID=42A
Ciss
Crss
Coss
10
100
1000
10000
100000
0
50
100
150
200
VDS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
Transfert Characteristics
TJ=25°C
TJ=125°C
0
25
50
75
100
125
01
23
45
67
VGS, Gate to Source Voltage (V)
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
Gate Charge vs Gate to Source
VDS=100V
VDS=250V
VDS=400V
0
2
4
6
8
10
12
0
60
120
180
240
300
360
Gate Charge (nC)
ID=42A
TJ=25°C
T
J=25°C
T
J=125°C
0
25
50
75
100
125
0
0.2
0.4
0.6
0.8
1
1.2
VSD, Source to Drain Voltage (V)
Drain Current vs Source to Drain Voltage
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration



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