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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APTM50AM70FT1G датащи(PDF) 2 Page - Microsemi Corporation |
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APTM50AM70FT1G датащи(HTML) 2 Page - Microsemi Corporation |
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2 / 5 page  APTM50AM70FT1G www.microsemi.com 2 – 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 250 IDSS Zero Gate Voltage Drain Current VDS = 500V VGS = 0V Tj = 125°C 1000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 42A 65 80 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 4 5 V IGSS Gate – Source Leakage Current VGS = ±30 V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 10800 Coss Output Capacitance 1455 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 148 pF Qg Total gate Charge 340 Qgs Gate – Source Charge 75 Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 42A 155 nC Td(on) Turn-on Delay Time 60 Tr Rise Time 70 Td(off) Turn-off Delay Time 155 Tf Fall Time Resistive switching @ 25°C VGS = 15V VBus = 333V ID = 42A RG = 2.2Ω 50 ns Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 50 IS Continuous Source current (Body diode) Tc = 80°C 37 A VSD Diode Forward Voltage VGS = 0V, IS = - 42A 1 V dv/dt Peak Diode Recovery 30 V/ns Tj = 25°C 260 trr Reverse Recovery Time Tj = 125°C 480 ns Tj = 25°C 1.5 Qrr Reverse Recovery Charge IS = - 42A VR = 100V diS/dt = 100A/µs Tj = 125°C 3.93 µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 42A di/dt ≤ 1000A/µs VDD ≤ 333V Tj ≤ 125°C |
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