BU508AF datasheet(1/1 Pages) WINGS

номер детали	BU508AF

подробное описание детали	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

PDF	1 Pages

Scroll/Zoom	100%

производитель	WINGS [Wing Shing Computer Components]

домашняя страница	http://www.wingshing.com/en

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1 / 1 page

GENERAL DESCRIPTION

Highvoltage,high-speed switching npn transistors in

a plastic envelope,primarily for use in switching power

circuites of colour television receivers

QUICK REFERENCE DATA

LIMITING VALUES

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V

CESM

Collector-emitter voltage peak value

V

BE = 0V

-

1500

V

CEO

Collector-emitter voltage (open base)

-

600

V

I

C

Collector current (DC)

-

8

A

I

CM

Collector current peak value

-

15

A

P

tot

Total power dissipation

T

mb

25

-

60

W

V

CEsat

Collector-emitter saturation voltage

I

C = 4.5A; IB = 2.0A

-

1.5

V

I

csat

Collector saturation current

f = 16KHz

A

V

F

Diode forward voltage

V

t

f

Fall time

I

C=4.5A,IB1=-IB2=1.2A,VCC=140V

1.0

s

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V

CESM

Collector-emitter voltage peak value

V

BE = 0V

-

1500

V

CEO

Collector-emitter voltage (open base)

-

600

V

I

C

Collector current (DC)

-

8

A

I

CM

Collector current peak value

-

15

A

I

B

Base current (DC)

-

4

A

I

BM

Base current peak value

-

6

A

P

tot

Total power dissipation

Tmb

25

-

60

W

T

stg

Storage temperature

-55

150

T

j

Junction temperature

-

150

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

I

CE

Collector cut-off current

V

BE = 0V; VCE = VCESMmax

-

1.0

mA

I

CES

V

BE = 0V; VCE = VCESMmax

-

2.0

mA

T

j = 125

V

CEOsust

Collector-emitter sustaining voltage

I

B = 0A; IC = 100mA

-

V

L = 25mH

V

CEsat

Collector-emitter saturation voltages

I

C = 4.5A; IB = 2.0A

-

1.5

V

BEsat

Base-emitter satuation voltage

I

C = 4.5A; IB = 2.0A

-

2.5

V

h

FE

DC current gain

I

C = 1A; VCE = 5V

8

40

V

F

Diode forward voltage

V

f

T

Transition frequency at f = 1MHz

I

C = 0.1A; VCE = 10V

3

MHz

C

c

Collector capacitance at f = 1MHz

V

CB = 10V

135

pF

t

s

Switching times(16KHz line deflecton circuit)

I

C=4.5A,IB1=-IB2=1.2A,VCC=140V

7.0

s

t

f

Turn-off storage time Turn-off fall time

IC=4.5A,IB1=-IB2=1.2A,VCC=140V

1.0

s

ELECTRICAL CHARACTERISTICS

TOP-3Fa

Wing Shing Computer Components Co., (H.K.)Ltd.

Tel:(852)2341 9276

Fax:(852)2797 8153

Homepage: http://www.wingshing.com

E-mail:

wsccltd@hkstar.com

BU508AF

SILICON DIFFUSED POWER TRANSISTOR

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