APTGF200DA120D3G

www.microsemi.com

5- 5

Forward Characteristic of diode

0

100

200

300

400

0

0.5

1

1.5

2

2.5

3

ZCS

hard

switching

ZVS

0

10

20

30

40

50

60

70

0

50

100

150

200

250

D=50%

Operating Frequency vs Collector Current

maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

0.18

0.00001

0.0001

0.001

0.01

0.1

1

10

rectangular Pulse Duration (Seconds)

Diode

Microsemi reserves the right to change, without notice, the specifications and information contained herein

Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103

5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262

and foreign patents. U.S and Foreign patents pending. All Rights Reserved.