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APTDC30H1201G датащи(PDF) 1 Page - Microsemi Corporation

номер детали APTDC30H1201G
подробное описание детали  SiC Diode Full Bridge Power Module
PDF  3 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTDC30H1201G датащи(HTML) 1 Page - Microsemi Corporation

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APTDC30H1201G
www.microsemi.com
1- 3
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VR
Maximum DC reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
IF(AV)
Maximum Average Forward Current
Duty cycle = 50%
TC = 80°C
30
IFSM
Non-Repetitive Forward Surge Current
10 µs
TC = 25°C
370
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
5
3
6
CR2
CR1
1
2
4
CR4
CR3
10
8
79
All multiple inputs and outputs must be shorted together
3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10
VRRM = 1200V
IF = 30A @ Tc = 80°C
Application
Uninterruptible Power Supply (UPS)
Induction heating
Welding equipment
High speed rectifiers
Features
SiC Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency
operation
Low losses
Low noise switching
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
SiC Diode Full Bridge
Power Module


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