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APTC90DAM60T1G датащи(PDF) 4 Page - Microsemi Corporation

номер детали APTC90DAM60T1G
подробное описание детали  Boost chopper Super Junction MOSFET Power Module
PDF  5 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTC90DAM60T1G датащи(HTML) 4 Page - Microsemi Corporation

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APTC90DAM60T1G
www.microsemi.com
4 – 5
Typical CoolMOS Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
6V
0
80
160
240
0
5
10
15
20
VDS, Drain to Source Voltage (V)
Low Voltage Output Characteristics
VGS=20, 8V
0
10
20
30
40
50
60
25
50
75
100
125
150
TC, Case Temperature (°C)
DC Drain Current vs Case Temperature
900
925
950
975
1000
25
50
75
100
125
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
Maximum Safe Operating Area
10 ms
100 µs
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
1
10
100
1000
10000
100000
0
25 50 75 100 125 150 175 200
VDS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
0
2
4
6
8
10
0
100
200
300
400
500
600
Gate Charge (nC)
Gate Charge vs Gate to Source Voltage
VDS=400V
ID=52A
TJ=25°C



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